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SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMSX32GX4M2A2666C18 16GB

SK Hynix HMA451U6AFR8N-TF 4GB vs Corsair CMSX32GX4M2A2666C18 16GB

总分
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分
star star star star star
Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

差异 规格 评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 3% 更低的延时
Corsair CMSX32GX4M2A2666C18 16GB 需要考虑的原因
Corsair CMSX32GX4M2A2666C18 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMSX32GX4M2A2666C18 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 38
  • 读取速度，GB/s
    14.7 left arrow 15.2
  • 写入速度，GB/s
    10.6 left arrow 13.1
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2438 left arrow 2892

SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMSX32GX4M2A2666C18 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M471A2K43CBCBCRC 16GB
Samsung M471A2K43CBCBCRC 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CM4X8GF2400C16N2 8GB
Corsair CM4X8GF2400C16N2 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
内存RAM