SK Hynix HMA451U6AFR8N-TF 4GB vs G Skill Intl F4-3200C14-16GTZKY 16GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

G Skill Intl F4-3200C14-16GTZKY 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZKY 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 37

左右 -85% 更低的延时
更快的读取速度，GB/s

18.4 14.7

测试中的平均数值
更快的写入速度，GB/s

14.2 10.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3200C14-16GTZKY 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 20
读取速度，GB/s

14.7 18.4
写入速度，GB/s

10.6 14.2
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2438 3540

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Avant Technology J644GU44J2320NF 32GB

Avant Technology J644GU44J2320NF 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

V-Color Technology Inc. TN48G24S817-VHA/R 8GB

V-Color Technology Inc. TN48G24S817-VHA/R 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905624-045.A00G 8GB

Kingston 9905624-045.A00G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMZ32GX3M4A1866C10 8GB

Corsair CMZ32GX3M4A1866C10 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Avant Technology W641GU42J5213N3 8GB

Avant Technology W641GU42J5213N3 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3200C14-16GVR 16GB

G Skill Intl F4-3200C14-16GVR 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB