SK Hynix HMA451U6AFR8N-TF 4GB vs Hewlett-Packard 7EH61AA# 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

Hewlett-Packard 7EH61AA# 8GB

Hewlett-Packard 7EH61AA# 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

更快的写入速度，GB/s

10.6 6.6

测试中的平均数值

Hewlett-Packard 7EH61AA# 8GB

需要考虑的原因
Hewlett-Packard 7EH61AA# 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的读取速度，GB/s

17 14.7

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

Hewlett-Packard 7EH61AA# 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

14.7 17.0
写入速度，GB/s

10.6 6.6
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2438 2598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

G Skill Intl F4-3200C15-8GTZKO 8GB

G Skill Intl F4-3200C15-8GTZKO 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4133C19-8GTZR 8GB

G Skill Intl F4-4133C19-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston 9905734-061.A00G 32GB

Kingston 9905734-061.A00G 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

SK Hynix HMT451S6MFR8C-PB 4GB

SK Hynix HMT451S6MFR8C-PB 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB