RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
比较
SK Hynix HMA451U6AFR8N-TF 4GB vs Micron Technology 16ATF1G64HZ-2G1B1 8GB
总分
SK Hynix HMA451U6AFR8N-TF 4GB
总分
Micron Technology 16ATF1G64HZ-2G1B1 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
37
39
左右 5% 更低的延时
更快的读取速度,GB/s
14.7
13.8
测试中的平均数值
更快的写入速度,GB/s
10.6
10.5
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF1G64HZ-2G1B1 8GB
报告一个错误
规格
完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
37
39
读取速度,GB/s
14.7
13.8
写入速度,GB/s
10.6
10.5
内存带宽,mbps
17000
17000
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2438
2443
SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M47472K43DB1-CTD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Kingston 9965662-013.A01G 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M378B5673EH1-CF8 2GB
Teikon TMA851S6CJR6N-VKSC 4GB
Kingston 9905458-017.A01LF 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Kingston 9965669-018.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Kingston 99U5403-465.A00LF 8GB
Mushkin 99[2/7/4]192F 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston MSI24D4S7D8MB-16 16GB
报告一个错误
×
Bug description
Source link