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SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology CT8G4DFD8213.16FA2 8GB
比较
SK Hynix HMA451U6AFR8N-TF 4GB vs Micron Technology CT8G4DFD8213.16FA2 8GB
总分
SK Hynix HMA451U6AFR8N-TF 4GB
总分
Micron Technology CT8G4DFD8213.16FA2 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
更快的读取速度,GB/s
14.7
11.9
测试中的平均数值
更快的写入速度,GB/s
10.6
10.2
测试中的平均数值
需要考虑的原因
Micron Technology CT8G4DFD8213.16FA2 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
37
左右 -19% 更低的延时
规格
完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology CT8G4DFD8213.16FA2 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
37
31
读取速度,GB/s
14.7
11.9
写入速度,GB/s
10.6
10.2
内存带宽,mbps
17000
17000
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2438
2585
SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK16GX4M2A2133C13 8GB
Samsung M471B5173DB0-YK0 4GB
AMD R748G2133U2S 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX2400C15D4/8G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Samsung M393B1K70CH0-CH9 8GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZ 16GB
Samsung M393B5170FH0-CH9 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M393A2G40DB1-CRC 16GB
Corsair CMD16GX3M2A1866C9 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Nanya Technology NT2GT64U8HD0BN-AD 2GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
AMD R538G1601U2S-UO 8GB
Kingston XW21KG-MIE2 8GB
报告一个错误
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Bug description
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