SK Hynix HMA82GS6CJR8N-VK 16GB vs Apacer Technology GD2.1527WE.001 8GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Apacer Technology GD2.1527WE.001 8GB

Apacer Technology GD2.1527WE.001 8GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Apacer Technology GD2.1527WE.001 8GB

需要考虑的原因
Apacer Technology GD2.1527WE.001 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 -33% 更低的延时
更快的读取速度，GB/s

17.3 15

测试中的平均数值
更快的写入速度，GB/s

13.5 10.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Apacer Technology GD2.1527WE.001 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 27
读取速度，GB/s

15.0 17.3
写入速度，GB/s

10.1 13.5
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2657 3440

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Apacer Technology GD2.1527WE.001 8GB

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Kingston KHX1866C10D3/4G 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905598-019.A00G 16GB

Samsung M393B2G70BH0-CH9 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Samsung T471A1K43CB1-CRC 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB