SK Hynix HMA82GS6CJR8N-VK 16GB vs Corsair CMT32GX4M2K4000C19 16GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 16% 更低的延时
更快的读取速度，GB/s

15 14.6

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Corsair CMT32GX4M2K4000C19 16GB

需要考虑的原因
Corsair CMT32GX4M2K4000C19 16GB

报告一个错误

更快的写入速度，GB/s

13.9 10.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMT32GX4M2K4000C19 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 43
读取速度，GB/s

15.0 14.6
写入速度，GB/s

10.1 13.9
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2657 3252

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB