SK Hynix HMA82GS6CJR8N-VK 16GB vs Crucial Technology BL32G36C16U4B.M16FB1 32GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Crucial Technology BL32G36C16U4B.M16FB1 32GB

Crucial Technology BL32G36C16U4B.M16FB1 32GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

Crucial Technology BL32G36C16U4B.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G36C16U4B.M16FB1 32GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

21.4 15

测试中的平均数值
更快的写入速度，GB/s

17.2 10.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology BL32G36C16U4B.M16FB1 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 29
读取速度，GB/s

15.0 21.4
写入速度，GB/s

10.1 17.2
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2657 4047

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G43TB1-CTD 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Apacer Technology D12.2344DT.001 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB

Corsair CMZ16GX3M2A1866C9 8GB

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Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB