RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
比较
SK Hynix HMA82GS6CJR8N-VK 16GB vs Crucial Technology BLS4G4D240FSB.8FARG 4GB
总分
SK Hynix HMA82GS6CJR8N-VK 16GB
总分
Crucial Technology BLS4G4D240FSB.8FARG 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FARG 4GB
报告一个错误
低于PassMark测试中的延时,ns
32
36
左右 -13% 更低的延时
更快的读取速度,GB/s
16.1
15
测试中的平均数值
更快的写入速度,GB/s
12.3
10.1
测试中的平均数值
规格
完整的技术规格清单
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
32
读取速度,GB/s
15.0
16.1
写入速度,GB/s
10.1
12.3
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2657
2902
SK Hynix HMA82GS6CJR8N-VK 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMW64GX4M4D3600C18 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
Samsung M378B5773DH0-CH9 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Samsung M4 70T5663RZ3-CF7 2GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Samsung M471B1G73QH0-YK0 8GB
Panram International Corporation PUD43000C154G4NJW 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4400C19-32GTZR 32GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Kingston KF552C40-16 16GB
Corsair CMD128GX4M8B2800C14 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Samsung M393B2G70BH0-YK0 16GB
Kingston KHX2666C13/16GX 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR24D4U7S8MB-8 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C16-8GISB 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
报告一个错误
×
Bug description
Source link