SK Hynix HMA82GS6CJR8N-VK 16GB vs Crucial Technology BLS8G4D240FSA.16FAR 8GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

更快的读取速度，GB/s

15 13.8

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Crucial Technology BLS8G4D240FSA.16FAR 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 -6% 更低的延时
更快的写入速度，GB/s

11.0 10.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 34
读取速度，GB/s

15.0 13.8
写入速度，GB/s

10.1 11.0
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2657 2920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG16GX4M2D3600C18 8GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Kingston 99U5474-028.A00LF 4GB

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Samsung M3 78T2953EZ3-CF7 1GB

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DSL Memory D4SS12081SH21A-A 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Corsair CMK16GX4M2D3600C16 8GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB