SK Hynix HMA82GS6CJR8N-VK 16GB vs Crucial Technology CT4G4DFS824A.C8FADP 4GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Crucial Technology CT4G4DFS824A.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更快的读取速度，GB/s

16 15

测试中的平均数值
更快的写入速度，GB/s

11.0 10.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

15.0 16.0
写入速度，GB/s

10.1 11.0
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2657 2544

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GR2400S464L17/16G 16GB

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G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK32GX4M4B3733C17 8GB

Corsair CMK32GX4M4B3733C17 8GB

Samsung M393B2G70BH0-CH9 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB