SK Hynix HMA851S6CJR6N-XN 4GB vs G Skill Intl F4-3200C16-8GRS 8GB

总分

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

总分

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

差异规格评论

差异

SK Hynix HMA851S6CJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6CJR6N-XN 4GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

G Skill Intl F4-3200C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

17.4 15.1

测试中的平均数值
更快的写入速度，GB/s

14.3 11.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA851S6CJR6N-XN 4GB

G Skill Intl F4-3200C16-8GRS 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

15.1 17.4
写入速度，GB/s

11.6 14.3
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2382 3138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB

Kingston KHX2133C11D3/4GX 4GB

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Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB