SK Hynix HMT325S6BFR8C-H9 2GB vs Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

18.8 11.6

测试中的平均数值
更快的写入速度，GB/s

15.2 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

11.6 18.8
写入速度，GB/s

7.3 15.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 3666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N