SK Hynix HMT325S6BFR8C-H9 2GB vs Crucial Technology CT8G4DFS824A.C8FDD1 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FDD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 41

左右 -8% 更低的延时
更快的读取速度，GB/s

14.5 11.6

测试中的平均数值
更快的写入速度，GB/s

10.5 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 38
读取速度，GB/s

11.6 14.5
写入速度，GB/s

7.3 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 2659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

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Kingston KVR533D2N4 512MB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Golden Empire CL14-16-16 D4-2400 16GB

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Kingston KVR533D2N4 512MB

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Kingston KHX318C10FR/8G 8GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMH32GX4M4E3200C16 8GB

Corsair CMH32GX4M4E3200C16 8GB