SK Hynix HMT325S6BFR8C-H9 2GB vs G Skill Intl F4-2400C15-8GTZR 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

G Skill Intl F4-2400C15-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

16.8 11.6

测试中的平均数值
更快的写入速度，GB/s

12.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-2400C15-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

11.6 16.8
写入速度，GB/s

7.3 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 3125

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2133C15-8GFT 8GB

G Skill Intl F4-2133C15-8GFT 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Kingston 9905713-004.A00G 4GB

Kingston 9905713-004.A00G 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB