SK Hynix HMT325S6BFR8C-H9 2GB vs G Skill Intl F4-3200C16-8GVK 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

G Skill Intl F4-3200C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

17.9 11.6

测试中的平均数值
更快的写入速度，GB/s

13.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

11.6 17.9
写入速度，GB/s

7.3 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 3261

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR16N11/8-SP 8GB

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Kingston 99U5474-013.A00LF 2GB

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SK Hynix HMA82GS6CJR8N-V-V 16GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9965669-027.A00G 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston KF3733C19D4/16GX 16GB

Kingston KF3733C19D4/16GX 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB