SK Hynix HMT325S6BFR8C-H9 2GB vs G Skill Intl F4-3333C16-8GTZKW 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

G Skill Intl F4-3333C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 41

左右 -86% 更低的延时
更快的读取速度，GB/s

17 11.6

测试中的平均数值
更快的写入速度，GB/s

13.0 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3333C16-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 22
读取速度，GB/s

11.6 17.0
写入速度，GB/s

7.3 13.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 3207

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M2A2666C16 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64AZ-2G6B1 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB