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SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-4266C19-4GTZ 4GB

SK Hynix HMT325S6BFR8C-H9 2GB vs G Skill Intl F4-4266C19-4GTZ 4GB

总分
star star star star star
SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分
star star star star star
G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

差异 规格 评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
G Skill Intl F4-4266C19-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-4266C19-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 41
    左右 -128% 更低的延时
  • 更快的读取速度，GB/s
    20.3 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.8 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-4266C19-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 18
  • 读取速度，GB/s
    11.6 left arrow 20.3
  • 写入速度，GB/s
    7.3 left arrow 17.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1438 left arrow 3507

SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较

Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB

G Skill Intl F4-4266C19-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Corsair CMK32GX4M4A2400C12 8GB
Corsair CMK32GX4M4A2400C12 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-3333C16-16GVR 16GB
G Skill Intl F4-3333C16-16GVR 16GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Corsair CMD64GX4M4C3000C15 16GB
Corsair CMD64GX4M4C3000C15 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston MSI24D4S7D8MB-16 16GB
Kingston MSI24D4S7D8MB-16 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMK32GX4M2A2666C16 16GB
Corsair CMK32GX4M2A2666C16 16GB
内存RAM