SK Hynix HMT325S6BFR8C-H9 2GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 52

左右 21% 更低的延时

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

报告一个错误

更快的读取速度，GB/s

20.5 11.6

测试中的平均数值
更快的写入速度，GB/s

10.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 52
读取速度，GB/s

11.6 20.5
写入速度，GB/s

7.3 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 2472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMSA3260MH78HAF-2666 8GB