SK Hynix HMT325S6BFR8C-H9 2GB vs Kingston 9965640-001.C00G 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

更快的读取速度，GB/s

11.6 10.1

测试中的平均数值

Kingston 9965640-001.C00G 16GB

需要考虑的原因
Kingston 9965640-001.C00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的写入速度，GB/s

7.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9965640-001.C00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

11.6 10.1
写入速度，GB/s

7.3 7.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 2050

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D240FSC.16FBD2 8GB

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Panram International Corporation PUD42400C154G4NJK 4GB

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AMD R9S48G3206U2S 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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A-DATA Technology DQVE1908 512MB

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Micron Technology 4ATF51264AZ-3G2E1 4GB

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PUSKILL PJ16TFK1GM8 16GB

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SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-2800C17-8GVR 8GB

G Skill Intl F4-2800C17-8GVR 8GB