SK Hynix HMT325S6BFR8C-H9 2GB vs Kingston KF3000C15D4/8GX 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Kingston KF3000C15D4/8GX 8GB

需要考虑的原因
Kingston KF3000C15D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

18.7 11.6

测试中的平均数值
更快的写入速度，GB/s

13.9 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston KF3000C15D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

11.6 18.7
写入速度，GB/s

7.3 13.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF552C40-16 16GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMR32GX4M4C3600C18 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Samsung M471A1G44BB0-CWE 8GB

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Kingston KHX1600C10D3/8G 8GB

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Corsair CMZ8GX3M2A1600C9 4GB

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Kingston 99U5458-008.A00LF 4GB

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Corsair CMD32GX4M4B2800C14 8GB

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Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Avant Technology J642GU42J5213N4 16GB

Avant Technology J642GU42J5213N4 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Essencore Limited KD4AGSA8A-32N2200 16GB

Essencore Limited KD4AGSA8A-32N2200 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB