SK Hynix HMT325S6BFR8C-H9 2GB vs Maxsun MSD44G24Q0 4GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 66

左右 38% 更低的延时

Maxsun MSD44G24Q0 4GB

需要考虑的原因
Maxsun MSD44G24Q0 4GB

报告一个错误

更快的读取速度，GB/s

15.5 11.6

测试中的平均数值
更快的写入速度，GB/s

7.4 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Maxsun MSD44G24Q0 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 66
读取速度，GB/s

11.6 15.5
写入速度，GB/s

7.3 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 1812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

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Kingston 9965433-034.A00LF 4GB

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Corsair CMT32GX4M4C3466C16 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB