SK Hynix HMT325S6BFR8C-H9 2GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 51

左右 20% 更低的延时

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 11.6

测试中的平均数值
更快的写入速度，GB/s

11.8 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 51
读取速度，GB/s

11.6 15.6
写入速度，GB/s

7.3 11.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1438 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863QZS-CF7 1GB

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Kingston 99U5471-012.A00LF 4GB

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Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Micron Technology 16G3200CL22 16GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB