SK Hynix HMT325S6BFR8C-H9 2GB vs Nanya Technology NT8GA64D88AX3S-HR 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 96

左右 57% 更低的延时
更快的读取速度，GB/s

11.6 6.8

测试中的平均数值
更快的写入速度，GB/s

7.3 4.2

测试中的平均数值

Nanya Technology NT8GA64D88AX3S-HR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88AX3S-HR 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 96
读取速度，GB/s

11.6 6.8
写入速度，GB/s

7.3 4.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 992

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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Micron Technology 4ATF51264HZ-3G2J1 4GB

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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMR32GX4M2F3600C18 16GB

Corsair CMR32GX4M2F3600C18 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

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G Skill Intl F3-12800CL9-4GBRL 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

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Corsair CM4X16GE2400Z16K4 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB