SK Hynix HMT325S6BFR8C-H9 2GB vs Panram International Corporation W4U2400PS-8G 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Panram International Corporation W4U2400PS-8G 8GB

需要考虑的原因
Panram International Corporation W4U2400PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

16.9 11.6

测试中的平均数值
更快的写入速度，GB/s

12.5 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Panram International Corporation W4U2400PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

11.6 16.9
写入速度，GB/s

7.3 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 2943

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston KV0M5R-MIE 8GB

Kingston KV0M5R-MIE 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905703-009.A00G 16GB

Kingston 9905703-009.A00G 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT16G4SFD832A.C16FN 16GB

Crucial Technology CT16G4SFD832A.C16FN 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB