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SK Hynix HMT325S6BFR8C-H9 2GB
Samsung V-GeN D4S4GL32A8TL 4GB

SK Hynix HMT325S6BFR8C-H9 2GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 58
    左右 29% 更低的延时
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 58
  • 读取速度，GB/s
    11.6 left arrow 18.5
  • 写入速度，GB/s
    7.3 left arrow 9.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1438 left arrow 1998

SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较

Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905702-008.A00G 8GB
Kingston 9905702-008.A00G 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9905624-036.A00G 8GB
Kingston 9905624-036.A00G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK64GX4M4A2400C14 16GB
Corsair CMK64GX4M4A2400C14 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
UMAX Technology 16GB
UMAX Technology 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Kingston KF3200C16D4/8GX 8GB
Kingston KF3200C16D4/8GX 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471A1A43DB0-CPB 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Corsair CMK128GX4M8X3600C18 16GB
Corsair CMK128GX4M8X3600C18 16GB
内存RAM