SK Hynix HMT325S6BFR8C-H9 2GB vs SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 11% 更低的延时

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

更快的读取速度，GB/s

14.2 11.6

测试中的平均数值
更快的写入速度，GB/s

13.6 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 46
读取速度，GB/s

11.6 14.2
写入速度，GB/s

7.3 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 2717

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston 99U5584-017.A00LF 4GB

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Corsair CMK32GX4M4A2666C16 8GB

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Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Transcend Information TS2GLH64V1B 16GB

Transcend Information TS2GLH64V1B 16GB