RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT325S6BFR8C-H9 2GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
比较
SK Hynix HMT325S6BFR8C-H9 2GB vs SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
总分
SK Hynix HMT325S6BFR8C-H9 2GB
总分
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
41
左右 -41% 更低的延时
更快的读取速度,GB/s
17.7
11.6
测试中的平均数值
更快的写入速度,GB/s
16.0
7.3
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
29
读取速度,GB/s
11.6
17.7
写入速度,GB/s
7.3
16.0
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1438
3961
SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较
Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6BFR8C-H9 2GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
Samsung M395T2863QZ4-CF76 1GB
Infineon (Siemens) AET560UD00-370A98Z 256MB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
Crucial Technology CT25664BA1339.M8FK 2GB
Asgard VMA45UG-MIC1U22T2 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C18-8GVK 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9965640-006.A01G 32GB
Corsair CMK64GX4M2D3600C18 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston CBD24D4S7D8ME-16 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
AMD R5316G1609U2K 8GB
Kingston 9965669-008.A03G 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905678-024.A00G 4GB
Kingston 9965525-140.A00LF 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston ACR26D4U9S8ME-8X 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GSXFB 16GB
报告一个错误
×
Bug description
Source link