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SK Hynix HMT325S6CFR8C-PB 2GB
Avant Technology W642GU42J5213N 16GB

SK Hynix HMT325S6CFR8C-PB 2GB vs Avant Technology W642GU42J5213N 16GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
Avant Technology W642GU42J5213N 16GB 需要考虑的原因
Avant Technology W642GU42J5213N 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 38
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
Avant Technology W642GU42J5213N 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 23
  • 读取速度，GB/s
    10.9 left arrow 18.3
  • 写入速度，GB/s
    6.6 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 3152

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

Avant Technology W642GU42J5213N 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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Avant Technology W642GU42J5213N 16GB
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内存RAM
Kingston KHX1600C9D3/8G 8GB
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内存RAM
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内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
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内存RAM
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Kingston 9905403-090.A01LF 4GB
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内存RAM
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Kingston 9905403-437.A01LF 4GB
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Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM