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SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CM4X8GE2666C16K8 8GB

SK Hynix HMT325S6CFR8C-PB 2GB vs Corsair CM4X8GE2666C16K8 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
Corsair CM4X8GE2666C16K8 8GB 需要考虑的原因
Corsair CM4X8GE2666C16K8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 38
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CM4X8GE2666C16K8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 34
  • 读取速度，GB/s
    10.9 left arrow 15.3
  • 写入速度，GB/s
    6.6 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 3041

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

Corsair CM4X8GE2666C16K8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CM4X8GE2666C16K8 8GB
Corsair CM4X8GE2666C16K8 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX4M2B3733C17 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMK8GX4M2B3733C17 4GB
Corsair CMK8GX4M2B3733C17 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston HP32D4U8S8HD-8X 8GB
Kingston HP32D4U8S8HD-8X 8GB
内存RAM
Corsair CMK32GX5M2A4800C40 16GB
Corsair CMK32GX5M2A4800C40 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP32D4U2S8ME-16 16GB
Kingston HP32D4U2S8ME-16 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM