SK Hynix HMT325S6CFR8C-PB 2GB vs Corsair CMWX8GD3600C18W2D 8GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Corsair CMWX8GD3600C18W2D 8GB

Corsair CMWX8GD3600C18W2D 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

Corsair CMWX8GD3600C18W2D 8GB

需要考虑的原因
Corsair CMWX8GD3600C18W2D 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 -52% 更低的延时
更快的读取速度，GB/s

17.3 10.9

测试中的平均数值
更快的写入速度，GB/s

14.6 6.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Corsair CMWX8GD3600C18W2D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 25
读取速度，GB/s

10.9 17.3
写入速度，GB/s

6.6 14.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1406 3404

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-YH9 8GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB