SK Hynix HMT325S6CFR8C-PB 2GB vs Kingston 99U5700-027.A00G 8GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Kingston 99U5700-027.A00G 8GB

Kingston 99U5700-027.A00G 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 46

左右 17% 更低的延时

Kingston 99U5700-027.A00G 8GB

需要考虑的原因
Kingston 99U5700-027.A00G 8GB

报告一个错误

更快的读取速度，GB/s

12.5 10.9

测试中的平均数值
更快的写入速度，GB/s

10.8 6.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston 99U5700-027.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 46
读取速度，GB/s

10.9 12.5
写入速度，GB/s

6.6 10.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1406 2325

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M2C3000C16 4GB

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PNY Electronics PNY 2GB

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G Skill Intl F3-17000CL11-4GBXL 4GB

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G Skill Intl F4-3600C18-32GTRG 32GB

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Samsung M393A2G40DB0-CPB 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CM4X8GF2133C15S2 8GB

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Crucial Technology CT8G4SFS6266.M4FB 8GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

Micron Technology 16HTF25664HY-800J2 2GB

Micron Technology 16HTF25664HY-800J2 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB