SK Hynix HMT325U6CFR8C-PB 2GB vs A-DATA Technology AO1P26KCST2-BZISHC 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

A-DATA Technology AO1P26KCST2-BZISHC 16GB

需要考虑的原因
A-DATA Technology AO1P26KCST2-BZISHC 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的读取速度，GB/s

15.5 12.3

测试中的平均数值
更快的写入速度，GB/s

14.2 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

12.3 15.5
写入速度，GB/s

8.1 14.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1706 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMA851S6CJR6N-XN 4GB

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Kingston 9905625-062.A00G 8GB

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Samsung M471B5773DH0-CK0 2GB

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Apacer Technology 78.CAGN7.4000C 8GB

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Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3300C16-8GTZ 8GB

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Kingston 99U5471-012.A00LF 4GB

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Crucial Technology CT16G4DFD8266.M16FR 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB