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SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB

SK Hynix HMT325U6CFR8C-PB 2GB vs A-DATA Technology AO2P26KC8T1-BPYS 8GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
A-DATA Technology AO2P26KC8T1-BPYS 8GB 需要考虑的原因
A-DATA Technology AO2P26KC8T1-BPYS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 43
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 15.4
  • 写入速度，GB/s
    8.1 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 2513

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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Corsair CMD8GX3M2A2933C12 4GB
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内存RAM
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Elpida EBJ41UF8BDU5-GN-F 4GB
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Kingston 9905678-138.A00G 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston KTD3KX-MIB 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
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Corsair CM4X4GF2400C14K4 4GB
内存RAM