SK Hynix HMT325U6CFR8C-PB 2GB vs Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

需要考虑的原因
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.7 12.3

测试中的平均数值
更快的写入速度，GB/s

13.9 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

12.3 16.7
写入速度，GB/s

8.1 13.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1706 3168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Kingston 9965600-012.A01G 16GB

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A-DATA Technology VDQVE1B16 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9965589-030.D01G 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK64GX4M4B3466C16 16GB

Corsair CMK64GX4M4B3466C16 16GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Apacer Technology 78.C1GS7.AUW0B 8GB

Apacer Technology 78.C1GS7.AUW0B 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMWX16GC3200C16W4 16GB

Corsair CMWX16GC3200C16W4 16GB