RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT325U6CFR8C-PB 2GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
比较
SK Hynix HMT325U6CFR8C-PB 2GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
总分
SK Hynix HMT325U6CFR8C-PB 2GB
总分
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
更快的写入速度,GB/s
8.1
7.3
测试中的平均数值
需要考虑的原因
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
43
左右 -87% 更低的延时
更快的读取速度,GB/s
14.4
12.3
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
23
读取速度,GB/s
12.3
14.4
写入速度,GB/s
8.1
7.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1706
2236
SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较
OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHYXPX-HYJ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston HP669238-071-HYC 4GB
DSL Memory D4SH1G081SH26A-C 8GB
Apacer Technology 78.01GA0.9K5 1GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CMD16GX4M4B3400C16 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMU32GX4M2A2666C16 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3200C15-8GTZ 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD32GX4M4B3733C17 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMW16GX4M2K4000C19 8GB
Samsung M4 70T2864QZ3-CF7 1GB
SK Hynix HMA851S6JJR6N-VK 4GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Samsung M3 93T5750CZA-CE6 2GB
Ramsta Ramsta-2400Mhz-8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA451R7MFR8N-TF 4GB
Samsung M378B5273DH0-CH9 4GB
Samsung M393A1G40EB1-CPB 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
报告一个错误
×
Bug description
Source link