SK Hynix HMT325U6CFR8C-PB 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

18.5 12.3

测试中的平均数值
更快的写入速度，GB/s

15.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

12.3 18.5
写入速度，GB/s

8.1 15.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Kingston ACR24D4U7D8MB-16 16GB

Kingston ACR24D4U7D8MB-16 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905678-102.A00G 8GB

Kingston 9905678-102.A00G 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB