SK Hynix HMT325U6CFR8C-PB 2GB vs Crucial Technology BLS4G4D240FSE.8FBD2 4GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更快的读取速度，GB/s

16.4 12.3

测试中的平均数值
更快的写入速度，GB/s

12.3 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

12.3 16.4
写入速度，GB/s

8.1 12.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1706 2723

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology BLS4G4D240FSE.8FBD2 4GB

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Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3600C17-4GVK 4GB

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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Patriot Memory (PDP Systems) PSD432G32002S 32GB

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