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SK Hynix HMT325U6CFR8C-PB 2GB
Kingston CBD24D4U7S8MA-8 8GB

SK Hynix HMT325U6CFR8C-PB 2GB vs Kingston CBD24D4U7S8MA-8 8GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
Kingston CBD24D4U7S8MA-8 8GB

Kingston CBD24D4U7S8MA-8 8GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
Kingston CBD24D4U7S8MA-8 8GB 需要考虑的原因
Kingston CBD24D4U7S8MA-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 43
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston CBD24D4U7S8MA-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 16.7
  • 写入速度，GB/s
    8.1 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 3133

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

Kingston CBD24D4U7S8MA-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378B1G73EB0-CK0 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Kingston KHX2400C11D3/4GX 4GB
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内存RAM
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内存RAM
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Essencore Limited KD4AGS88A-26N1600 16GB
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内存RAM
Samsung M471B5173DB0-YK0 4GB
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内存RAM
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Kingmax Semiconductor GLLH22F-18KII5------ 16GB
内存RAM
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Crucial Technology BLT16G4D30AETA.K16FB 16GB
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Corsair CMT32GX4M2Z3600C18 16GB
内存RAM
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内存RAM
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SK Hynix HMT325S6CFR8C-H9 2GB
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内存RAM
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Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM