SK Hynix HMT325U6CFR8C-PB 2GB vs Micron Technology 8ATF1G64AZ-2G3E1 8GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G3E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 43

左右 -23% 更低的延时
更快的读取速度，GB/s

15.4 12.3

测试中的平均数值
更快的写入速度，GB/s

11.3 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 35
读取速度，GB/s

12.3 15.4
写入速度，GB/s

8.1 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1706 2713

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J644GU44J9266NQ 32GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 99U5584-004.A00LF 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Hewlett-Packard 7EH61AA# 8GB

Hewlett-Packard 7EH61AA# 8GB

Kingston MSI16D3LS1MNG/8G 8GB

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Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB