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SK Hynix HMT325U6CFR8C-PB 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB

SK Hynix HMT325U6CFR8C-PB 2GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
Samsung V-GeN D4S8GL26A8TL5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 43
    左右 -95% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 22
  • 读取速度，GB/s
    12.3 left arrow 18.0
  • 写入速度，GB/s
    8.1 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 3110

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

Samsung V-GeN D4S8GL26A8TL5 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
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G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Kingston 99U5663-001.A00G 16GB
内存RAM
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
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内存RAM
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A-DATA Technology DDR3 1333G 2GB
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G Skill Intl F4-3000C15-4GTZ 4GB
内存RAM
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AMD AE34G1601U1 4GB
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Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
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内存RAM
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Samsung 9905599-020.A00G 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
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Crucial Technology BLT4G4D30AETA.K8FD 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM