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SK Hynix HMT351S6CFR8C-PB 4GB
A-DATA Technology DDR4 3200 2OZ 4GB

SK Hynix HMT351S6CFR8C-PB 4GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分
star star star star star
SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分
star star star star star
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异 规格 评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
A-DATA Technology DDR4 3200 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 46
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 29
  • 读取速度，GB/s
    11.6 left arrow 17.2
  • 写入速度，GB/s
    8.0 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 3409

SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB

A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
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A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M393B1K70QB0-CK0 8GB
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内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
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Team Group Inc. Quad-Vulcan-1866 8GB
内存RAM
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Kingston KVR533D2N4 512MB
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内存RAM