SK Hynix HMT351S6CFR8C-PB 4GB vs Corsair CM4X16GE2133C13K8 16GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

Corsair CM4X16GE2133C13K8 16GB

需要考虑的原因
Corsair CM4X16GE2133C13K8 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的读取速度，GB/s

16.1 11.6

测试中的平均数值
更快的写入速度，GB/s

12.9 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Corsair CM4X16GE2133C13K8 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

11.6 16.1
写入速度，GB/s

8.0 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1854 3266

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

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Corsair CM4X16GE2133C13K8 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

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Team Group Inc. TEAMGROUP-lnd-2133 8GB

Team Group Inc. TEAMGROUP-lnd-2133 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9905624-025.A00G 8GB

Kingston 9905624-025.A00G 8GB