SK Hynix HMT351S6CFR8C-PB 4GB vs Crucial Technology BLS16G4D240FSC.16FBR 16GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

Crucial Technology BLS16G4D240FSC.16FBR 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSC.16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的读取速度，GB/s

16.3 11.6

测试中的平均数值
更快的写入速度，GB/s

12.8 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

11.6 16.3
写入速度，GB/s

8.0 12.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1854 3202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMWX16GC3200C16W4 16GB

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A-DATA Technology DDR3 1600 4GB

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Peak Electronics 256X64M-67E 2GB

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Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

Neo Forza NMUD480E82-2666 8GB

Neo Forza NMUD480E82-2666 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB