SK Hynix HMT351S6CFR8C-PB 4GB vs Micron Technology 4ATF1G64AZ-3G2B1 8GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

差异规格评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

Micron Technology 4ATF1G64AZ-3G2B1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的读取速度，GB/s

15.4 11.6

测试中的平均数值
更快的写入速度，GB/s

10.3 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

11.6 15.4
写入速度，GB/s

8.0 10.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1854 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Kingston 99U5702-089.A00G 8GB

Kingston 99U5702-089.A00G 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773SB0-CK0 2GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Kingston 9965662-009.A00G 16GB

Kingston 9965662-009.A00G 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMT64GX4M8X3000C15 8GB

Corsair CMT64GX4M8X3000C15 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMK8GX4M2D2666C16 4GB

Corsair CMK8GX4M2D2666C16 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB