SK Hynix HMT351U6CFR8C-H9 4GB vs Mushkin MR[A/B]4U346GJJM8G 8GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 57

左右 26% 更低的延时

Mushkin MR[A/B]4U346GJJM8G 8GB

需要考虑的原因
Mushkin MR[A/B]4U346GJJM8G 8GB

报告一个错误

更快的读取速度，GB/s

19.4 13.7

测试中的平均数值
更快的写入速度，GB/s

9.7 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

Mushkin MR[A/B]4U346GJJM8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 57
读取速度，GB/s

13.7 19.4
写入速度，GB/s

8.3 9.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 2253

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6CFR8C-PB 2GB

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Samsung M391A2K43BB1-CPB 16GB

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G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

Kingston XN205T-MIE 16GB

Kingston XN205T-MIE 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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Kingston 9905624-013.A00G 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB