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SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CB8GU2400.C8JT 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB vs Crucial Technology CB8GU2400.C8JT 8GB

总分
star star star star star
SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

总分
star star star star star
Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB

差异 规格 评论

差异

SK Hynix HMT41GS6AFR8A-PB 8GB 需要考虑的原因
SK Hynix HMT41GS6AFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    48 left arrow 71
    左右 32% 更低的延时
Crucial Technology CB8GU2400.C8JT 8GB 需要考虑的原因
Crucial Technology CB8GU2400.C8JT 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CB8GU2400.C8JT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 71
  • 读取速度，GB/s
    11.6 left arrow 16.0
  • 写入速度，GB/s
    7.8 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2029 left arrow 1956

SK Hynix HMT41GS6AFR8A-PB 8GB RAM的比较

Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CB8GU2400.C8JT 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CB8GU2400.C8JT 8GB
Crucial Technology CB8GU2400.C8JT 8GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMT32GX4M4C3466C16 8GB
Corsair CMT32GX4M4C3466C16 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
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Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
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A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Kingston HP26D4S9S1ME-4 4GB
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Lexar Co Limited LD4AS016G-H3200GST 16GB
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Kingston KHX1600C9D3/8G 8GB
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Crucial Technology BLS16G4D240FSB.16FAD 16GB
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Kingston 9965516-112.A00LF 16GB
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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
内存RAM
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
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SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
内存RAM