SK Hynix HMT41GS6BFR8A-PB 8GB vs Samsung M471A2G43AB2-CWE 16GB

总分

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

总分

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

差异规格评论

差异

SK Hynix HMT41GS6BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6BFR8A-PB 8GB

报告一个错误

Samsung M471A2G43AB2-CWE 16GB

需要考虑的原因
Samsung M471A2G43AB2-CWE 16GB

报告一个错误

更快的读取速度，GB/s

15.9 12.1

测试中的平均数值
更快的写入速度，GB/s

12.8 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6BFR8A-PB 8GB

Samsung M471A2G43AB2-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 46
读取速度，GB/s

12.1 15.9
写入速度，GB/s

8.0 12.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2088 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Corsair CMK32GX5M2B5600C36 16GB

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Corsair CMW32GX4M2C3333C16 16GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

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Corsair CMW16GX4M2Z4000C18 8GB

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Corsair CMD16GX3M2A1866C9 8GB

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SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB