SK Hynix HMT41GU7BFR8A-PB 8GB vs Samsung M474A1G43DB0-CPB 8GB

总分

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

总分

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

差异规格评论

差异

SK Hynix HMT41GU7BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GU7BFR8A-PB 8GB

报告一个错误

更快的读取速度，GB/s

13.7 9.7

测试中的平均数值
更快的写入速度，GB/s

9.3 6.8

测试中的平均数值

Samsung M474A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M474A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7BFR8A-PB 8GB

Samsung M474A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

13.7 9.7
写入速度，GB/s

9.3 6.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2290 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Chun Well Technology Holding Limited D4U0836181B 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Crucial Technology CT8G4SFS824A.C8FDR1 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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Kingston 9905701-006.A00G 16GB

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Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB

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G Skill Intl F5-5600J4040C16G 16GB

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-2400C17-8GFT 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3400C16-16GTZ 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB