SK Hynix HMT41GU7MFR8A-H9 8GB vs EXCELERAM D48G8G8H8SS9CJRB22 8GB

总分

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

总分

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

差异规格评论

差异

SK Hynix HMT41GU7MFR8A-H9 8GB

需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 65

左右 58% 更低的延时

EXCELERAM D48G8G8H8SS9CJRB22 8GB

需要考虑的原因
EXCELERAM D48G8G8H8SS9CJRB22 8GB

报告一个错误

更快的读取速度，GB/s

17 14.8

测试中的平均数值
更快的写入速度，GB/s

9.5 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7MFR8A-H9 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 65
读取速度，GB/s

14.8 17.0
写入速度，GB/s

9.0 9.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2650 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

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PNY Electronics PNY 2GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston MSI24D4S7S7MH-16 16GB

Kingston MSI24D4S7S7MH-16 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3200C16-4GRB 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB